Shining a little light changes metal into semiconductor

Shining a little light changes metal into semiconductor 

          

By blending their expertise, two materials science engineers at Washington University in St. Louis changed the electronic properties of a new class of materials — just by exposing it to light.

With funding from the Washington University International Center for Advanced Renewable Energy and Sustainability (I-CARES), Parag Banerjee, PhD, and Srikanth Singamaneni, PhD, both assistant professors of materials science, brought together their respective areas of research.

Singamaneni’s area of expertise is in making tiny, pebble-like nanoparticles, particularly gold nanorods. Banerjee’s area of expertise is making thin films. They wanted to see how the properties of both materials would change when combined.

The research was published online in August in ACS Applied Materials & Interfaces.

The research team took the gold nanorods and put a very thin blanket of zinc oxide, a common ingredient in sunscreen, on top to create a composite. When they turned on light, they noticed that the composite had changed from one with metallic properties into a semiconductor, a material that partly conducts current. Semiconductors are commonly made of silicon and are used in computers and nearly all electronic devices.

“We call it metal-to-semiconductor switching,” Banerjee said. “This is a very exciting result because it can lead to opportunities in different kinds of sensors and devices.”

Banjeree said when the metallic gold nanorods are exposed to light, the electrons inside the gold get excited and enter the zinc oxide film, which is a semiconductor. When the zinc oxide gets these new electrons, it starts to conduct electricity.

“We found out that the thinner the film, the better the response,” he said. “The thicker the film, the response goes away. How thin? About 10 nanometers, or a 10 billionth of a meter.”

Other researchers working with solar cells or photovoltaic devices have noticed an improvement in performance when these two materials are combined; however, until now, none have broken it down to discover how it happens, Banerjee said.

“If we start understanding the mechanism for charge conduction, we can start thinking about applications,” he said. “We think there are opportunities to make very sensitive sensors, such as an electronic eye. We are now looking to see if there is a different response when we shine a red, blue or green light on this material.”

Banerjee also said this same technology can be used in solar cells.

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Source:  Wu F, Tian L, Kanjolia R, Singamaneni S, Banerjee P. Plasmonic Metal-to-Semiconductor Switching in Au Nanorod-ZnO nanocomposite films. ACS Applied Materials & Interfaces. Dx.doi.org/10.1021/am402309x.

Progress in Molecular Nanotechnology

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Stanford scientists use DNA to assemble a transistor from graphene

Stanford scientists use DNA to assemble a transistor from graphene

DNA meets electronics

DNA is the blueprint for life. Could it also become the template for making a new generation of computer chips based not on silicon, but on an experimental material known as graphene?

That's the theory behind a process that Stanford chemical engineering professor Zhenan Bao reveals in Nature Communications.

Bao and her co-authors, former post-doctoral fellows Anatoliy Sokolov and Fung Ling Yap, hope to solve a problem clouding the future of electronics: consumers expect silicon chips to continue getting smaller, faster and cheaper, but engineers fear that this virtuous cycle could grind to a halt.

Why has to do with how silicon chips work.

Everything starts with the notion of the semiconductor, a type of material that can be induced to either conduct or stop the flow of electricity. Silicon has long been the most popular semiconductor material used to make chips.

The basic working unit on a chip is the transistor. Transistors are tiny gates that switch electricity on or off, creating the zeroes and ones that run software.

To build more powerful chips, designers have done two things at the same time: they've shrunk transistors in size and also swung those gates open and shut faster and faster.

The net result of these actions has been to concentrate more electricity in a diminishing space. So far that has produced small, faster, cheaper chips. But at a certain point, heat and other forms of interference could disrupt the inner workings of silicon chips.

"We need a material that will let us build smaller transistors that operate faster using less power," Bao said.

Graphene has the physical and electrical properties to become a next-generation semiconductor material – if researchers can figure out how to mass-produce it.

Graphene is a single layer of carbon atoms arranged in a honeycomb pattern. Visually it resembles chicken wire. Electrically this lattice of carbon atoms is an extremely efficient conductor.

Bao and other researchers believe that ribbons of graphene, laid side-by-side, could create semiconductor circuits. Given the material's tiny dimensions and favorable electrical properties, graphene nano ribbons could create very fast chips that run on very low power, she said.

"However, as one might imagine, making something that is only one atom thick and 20 to 50 atoms wide is a significant challenge," said co-author Sokolov.

To handle this challenge, the Stanford team came up with the idea of using DNA as an assembly mechanism.

Physically, DNA strands are long and thin, and exist in roughly the same dimensions as the graphene ribbons that researchers wanted to assemble.

Chemically, DNA molecules contain carbon atoms, the material that forms graphene.

The real trick is how Bao and her team put DNA's physical and chemical properties to work.

The researchers started with a tiny platter of silicon to provide a support (substrate) for their experimental transistor. They dipped the silicon platter into a solution of DNA derived from bacteria and used a known technique to comb the DNA strands into relatively straight lines.

Next, the DNA on the platter was exposed to a copper salt solution. The chemical properties of the solution allowed the copper ions to be absorbed into the DNA.

Next the platter was heated and bathed in methane gas, which contains carbon atoms. Once again chemical forces came into play to aid in the assembly process. The heat sparked a chemical reaction that freed some of the carbon atoms in the DNA and methane. These free carbon atoms quickly joined together to form stable honeycombs of graphene.

"The loose carbon atoms stayed close to where they broke free from the DNA strands, and so they formed ribbons that followed the structure of the DNA," Yap said.

So part one of the invention involved using DNA to assemble ribbons of carbon. But the researchers also wanted to show that these carbon ribbons could perform electronic tasks. So they made transistors on the ribbons.

"We demonstrated for the first time that you can use DNA to grow narrow ribbons and then make working transistors," Sokolov said.

The paper drew praise from UC Berkeley associate professor Ali Javey, an expert in the use of advanced materials and next-generation electronics.

"This technique is very unique and takes advantage of the use of DNA as an effective template for controlled growth of electronic materials," Javey said. "In this regard the project addresses an important research need for the field."

Bao said the assembly process needs a lot of refinement. For instance, not all of the carbon atoms formed honeycombed ribbons a single atom thick. In some places they bunched up in irregular patterns, leading the researchers to label the material graphitic instead of graphene.

Even so, the process, about two years in the making, points toward a strategy for turning this carbon-based material from a curiosity into a serious contender to succeed silicon.

"Our DNA-based fabrication method is highly scalable, offers high resolution and low manufacturing cost," said co-author Yap. "All these advantages make the method very attractive for industrial adoption."

Source : http://www.eurekalert.org/pub_releases/2013-09/ssoe-ssu090613.php

All about Electromagnetic Radiations

Original photo

Two-in-one solution for low cost polymer LEDs and solar cells

Two-in-one solution for low cost polymer LEDs and solar cells

July 22, 2013 — Considerable improvement in device performance of polymer-based optoelectronic devices is reported today by researchers from Ulsan National Institute of Science and Technology (UNIST), South Korea. The new plasmonic material, can be applied to both polymer light-emitting diodes (PLEDs) and polymer solar cells (PSCs), with world-record high performance, through a simple and cheap process.

The contrary demands of these devices mean that there are few metal nanoparticles that can enhance performance in PLEDs and PSCs at the same time.

Most semiconducting optoelectronic devices (OEDs), including photodiodes, solar cells, light emitting diodes (LEDs), and semiconductor lasers, are based on inorganic materials. Examples include gallium nitride for light-emitting diodes and silicon for solar cells.

Due to the limited availability of raw materials and the complex processing required to manufacture OEDs based on inorganic materials, the cost of device fabrication is increasing. There is great interest in thin-film OEDs that are made from alternative semiconductors.

Among these materials, organic semiconductors have received much attention for use in next-generation OEDs because of the potential for low-cost and large-area fabrication using solution processing.

Despite extensive efforts to develop new materials and device architectures enhancing the performance of these devices, further improvements in efficiency are needed, before there can be widespread use and commercialization of these technologies.

The material prepared by the UNIST research team is easy to synthesize with basic equipment and has low-temperature solution processability. This low-temperature solution processability enables roll-to-roll mass production techniques and is suitable for printed electronic devices.

Journal Reference:

1. Hyosung Choi, Seo-Jin Ko, Yuri Choi, Piljae Joo, Taehyo Kim, Bo Ram Lee, Jae-Woo Jung, Hee Joo Choi, Myoungsik Cha, Jong-Ryul Jeong, In-Wook Hwang, Myoung Hoon Song, Byeong-Su Kim, Jin Young Kim. Versatile surface plasmon resonance of carbon-dot-supported silver nanoparticles in polymer optoelectronic devices. Nature Photonics, 2013; DOI: 10.1038/nphoton.2013.181

Scientists break record for thinnest light-absorber: May lead to more efficient, cheaper solar cells

Scientists break record for thinnest light-absorber: May lead to more efficient, cheaper solar cells

July 18, 2013 — Stanford University scientists have created the thinnest, most efficient absorber of visible light on record. The nanosize structure, thousands of times thinner than an ordinary sheet of paper, could lower the cost and improve the efficiency of solar cells, according to the scientists.

Their results are published in the current online edition of the journal Nano Letters.

"Achieving complete absorption of visible light with a minimal amount of material is highly desirable for many applications, including solar energy conversion to fuel and electricity," said Stacey Bent, a professor of chemical engineering at Stanford and a member of the research team. "Our results show that it is possible for an extremely thin layer of material to absorb almost 100 percent of incident light of a specific wavelength."

Thinner solar cells require less material and therefore cost less. The challenge for researchers is to reduce the thickness of the cell without compromising its ability to absorb and convert sunlight into clean energy.

For the study, the Stanford team created thin wafers dotted with trillions of round particles of gold. Each gold nanodot was about 14 nanometers tall and 17 nanometers wide.

Journal Reference:

1. Carl Hägglund, Gabriel Zeltzer, Ricardo Ruiz, Isabell Thomann, Han-Bo-Ram Lee, Mark L. Brongersma, Stacey F. Bent. Self-Assembly Based Plasmonic Arrays Tuned by Atomic Layer Deposition for Extreme Visible Light Absorption. Nano Letters, 2013; 13 (7): 3352 DOI:10.1021/nl401641v